| 摘要 |
A transit time device (15, 15') in a silicon-on-insulator (SOI) technology is disclosed. An anode region (18) and a cathode region (20) are formed on opposing ends of an epitaxial layer (14), with an intrinsic or lightly-doped region (22) disposed therebetween. Sinker structures (30p, 30n) are formed in an overlying epitaxial layer (24) over and in contact with the anode and cathode regions (18, 20). A charge injection terminal may be formed in a sinker structure (32n) in the overlying epitaxial layer (24), if the transit time device (15') is of the three-terminal type. The device (15, 15') has extremely low parasitic capacitance to substrate, because of the buried oxide layer (12) underlying the intrinsic region (22).
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