发明名称 Projection exposure apparatus and method employing rectilinear aperture stops for use with periodic mask patterns
摘要 A projection optical system and method projects and forms an image of a pattern arrayed on a first surface (mask), and exhibiting a periodicity in a predetermined direction (X- or Y-direction), on a second surface (wafer). A stop has an aperture showing a line symmetry with respect to a symmetric axis intersecting an optical axis of the projection optical system and extending in a direction (Y- or X-direction) orthogonal to the predetermined direction and having the outline at least a part of which are rectilinear portions. The stop is disposed on a Fourier transform plane of the first surface within the projection optical system or a surface in the vicinity thereof.
申请公布号 US6661498(B1) 申请公布日期 2003.12.09
申请号 US20000546233 申请日期 2000.04.10
申请人 NIKON CORPORATION 发明人 HIRUKAWA SHIGERU
分类号 G03B27/42;G03F7/20;H01L21/027;(IPC1-7):G03B27/42;G03B27/72 主分类号 G03B27/42
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