发明名称 Enhanced conductivity body biased PMOS driver
摘要 According to one embodiment of the present invention a method for biasing a body of a transistor. The method includes detecting a voltage applied to a terminal of a transistor and coupling a biasing voltage to the body based upon the detected voltage.
申请公布号 US6661277(B2) 申请公布日期 2003.12.09
申请号 US20020314309 申请日期 2002.12.09
申请人 INTEL CORPORATION 发明人 DABRAL SANJAY
分类号 H01L29/78;H03K19/00;(IPC1-7):H03K3/01 主分类号 H01L29/78
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