发明名称 |
Method for monitoring contaminating particles in a chamber |
摘要 |
A method for determining the number of contaminating particles in a process chamber is described. While the method is particularly suited for detecting particles in a metal etch chamber, the present invention novel method can be utilized in any other semiconductor process chambers as long as there is a particle contamination problem. The method is carried out by conducting at least two particle dislodging cycles each including a step of flowing at least one process gas used in the process into the chamber at a flow rate of at least 30 sccm, and then evacuating the at least one process gas from the chamber to a pressure of not higher than 1 mTorr. Typical process gas that can be utilized in a metal etch chamber includes Cl2, BCl3 and Ar. The process gas should be flown into the etch chamber until a chamber pressure of at least 6 mTorr is reached, and preferably until at least a chamber pressure of 8 mTorr is reached. After the particle dislodging cycles are conducted, the number of particles that have fallen onto a top surface of the substrate can be counted by a particle counter.
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申请公布号 |
US6660528(B1) |
申请公布日期 |
2003.12.09 |
申请号 |
US20000547431 |
申请日期 |
2000.04.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN HORNG-WEN;LU JENG-FIENG;PENG CHIANG-JEN |
分类号 |
G01N15/06;(IPC1-7):G01N21/00 |
主分类号 |
G01N15/06 |
代理机构 |
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地址 |
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