发明名称 |
Method for anodically bonding glass and semiconducting material together |
摘要 |
A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100° C. and 500° C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
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申请公布号 |
US6660614(B2) |
申请公布日期 |
2003.12.09 |
申请号 |
US20010849127 |
申请日期 |
2001.05.04 |
申请人 |
NEW MEXICO TECH RESEARCH FOUNDATION |
发明人 |
HIRSCHFELD DEIDRE A.;SCHUBERT W KENT;WATSON CHAD S. |
分类号 |
B81C3/00;H01L21/58;(IPC1-7):H01L21/30;H01L21/46 |
主分类号 |
B81C3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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