发明名称 Method for anodically bonding glass and semiconducting material together
摘要 A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100° C. and 500° C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
申请公布号 US6660614(B2) 申请公布日期 2003.12.09
申请号 US20010849127 申请日期 2001.05.04
申请人 NEW MEXICO TECH RESEARCH FOUNDATION 发明人 HIRSCHFELD DEIDRE A.;SCHUBERT W KENT;WATSON CHAD S.
分类号 B81C3/00;H01L21/58;(IPC1-7):H01L21/30;H01L21/46 主分类号 B81C3/00
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