Dual damascene metal interconnect structure with dielectric studs

摘要

A method for forming a dual damascene conductive line and conductive plug using porous low k dielectric materials in the via and trench layers. The via layer is provided with dense low k dielectric plugs that increase the mechanical strength of the porous low k dielectric layer that forms the via layer. A via fill technique etches some of the dielectric plugs in the via layer and fills them with conductive material. The via fill technique reduces the damage done to the via holes in the via layer caused by photoresist removal processes.