发明名称 Magnetic field sensing element and device having magnetoresistance element and integrated circuit formed on the same substrate
摘要 A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.
申请公布号 US6661221(B2) 申请公布日期 2003.12.09
申请号 US20020162180 申请日期 2002.06.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAGUCHI MOTOHISA;SHINJO IZURU;KAWANO YUJI;FUKAMI TATSUYA;TSUTSUMI KAZUHIKO;SAKAI YUUICHI;HIRAOKA NAOKI;HATAZAWA YASUYOSHI
分类号 G01P3/488;G01D5/18;G01D5/245;G01R33/09;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01P3/488
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