| 摘要 |
A method of forming a semiconductor device wherein treatment gate insulating layer is formed such that its edges extend beyond edges of a gate electrode. Specifically, the method includes the steps of forming a non-single crystalline semiconductor layer on an insulating surface, forming a gate electrode on the semiconductor layer with a gate insulating layer formed therebetween, doping portions of the semiconductor layer with an impurity to form source and drain regions, and exposing the doped portions with light to crystallize the portions and activate the dopant. Since the gate electrode extends beyond the edges of the gate electrode, the doping of the portions of the semiconductor layer and the exposure to light irradiation is carried out through a part of the gate insulating layer.
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