| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of forming a large number of semiconductor devices at one time and remarkably improving a manufacturing process and a manufacturing cost, and to provide a method for manufacturing a hybrid integrated circuit device for realizing simple assembling steps by omitting a wire bonding step of a fine wire or a die bonding step of a semiconductor element or the like. SOLUTION: The method for manufacturing the semiconductor used for the hybrid integrated circuit device or particularly the semiconductor containing a power transistor 13 comprises steps of fixing the power transistor on a heat sink 11, connecting an extracting electrode 12 provided adjacent to the transistor 13 by a fine metal wire 16, and molding them with an insulating resin 17. Thereafter, the semiconductor device is fixed to a mounting substrate 21 having a conductive pattern 22 formed thereon, and hence assembling steps of the hybrid integrated circuit device can be reduced. |
