发明名称 |
METHOD FOR FABRICATING DIELECTRIC LAYER OF CAPACITOR |
摘要 |
PURPOSE: A method for fabricating a dielectric layer of a capacitor is provided to improve capacitance and minimize leakage current inside the dielectric layer by improving the characteristic of the dielectric layer. CONSTITUTION: The capacitor(140) is composed of a lower electrode(110), the dielectric layer and an upper electrode(130). The first dielectric layer is deposited on the lower electrode. The first dielectric layer is crystallized. The second dielectric layer is epitaxially grown on the first dielectric layer to include the crystallinity of the first dielectric layer. The first and second dielectric layers are formed at the same temperature.
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申请公布号 |
KR20030092872(A) |
申请公布日期 |
2003.12.06 |
申请号 |
KR20020030710 |
申请日期 |
2002.05.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JAE HYEONG;JUNG, SUK JIN;KIM, WAN DON;YOO, CHA YEONG |
分类号 |
H01L27/108;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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