MAGNETIC RESISTANCE RAM AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A magnetic resistance RAM and a method for manufacturing the same are provided to drastically improve the magnetic resistance ratio of the semiconductor memory device of the magnetic resistance RAM by using an aluminum-hafnium-oxide as a barrier layer, thereby improving the reliability of the barrier layer. CONSTITUTION: A magnetic resistance RAM includes a lower electrode(141), a first magnetic layer(142), a barrier layer(143), a second magnetic layer(144), a top electrode(145), a second gate(130) and a bitline(150). The lower electrode(141) is connected to the source junction and the first magnetic layer(142) is formed on the top of the lower electrode(141). The barrier layer(143) made of an insulating layer consisting of an aluminum and a hafnium. The second magnetic layer(144) is formed on top of the barrier layer corresponding to the first magnetic layer(142) and the top electrode(145) is formed on the second magnetic layer(144). The second gate(130) inserted between the first gate(120) and the lower electrode(141) for controlling the magnetic information among the first and the second magnetic layers(141,144). And, the bitline(150) is electrically connected to the top electrode(145) with vertically crossing to the first gate(120).