| 摘要 |
PURPOSE: A bipolar transistor simulation method and system is provided to offer a model for definitely describing an internal current of a bipolar transistor, and to speedily extract parameters of an offered current source model. CONSTITUTION: A voltage and a temperature of an internal contact portion are calculated on a basis of measured data and a physical feature of a wafer, and a pseudo algebraic equation is built on a basis of the calculated voltage and temperature(8, 9). The built equation is solved and a thermal resistance is calculated(10). The voltage and the temperature of the internal contact portion are divided into m sections on a basis of the calculated thermal resistance(11). The value of a section is increased one by one for selecting one among the m sections(12). It is checked whether the section to be calculated is the first section(13). In a case that the section to be calculated is the first section, a current source function satisfying a zero bias boundary condition is generated(15). In a case that the section to be calculated is not the first section, a polynomial for a current source is built(16). It is checked whether the section to be calculated is the last section(18). In a case that the section to be calculated is the last section, the function of the current source to be calculated in each section is interlinked(19).
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