ORGANIC ANTI-REFLECTION COATING FOR ARF PHOTORESIST AND PREPARATION THEREOF

摘要

PURPOSE: Provided is an organic anti-reflection coating composition, which decreases an adverse effect of reflection from a background substrate in a photolithography process using various radiations, gives excellent resolution and has no loss in thickness by the photoresist solvent. CONSTITUTION: The organic anti-reflection coating composition for an ArF photoresist is characterized by comprising the compound of the formula 1 as a light absorbing agent, wherein each R is independently or simultaneously hydrogen, hydroxy, halogen, nitro group, amino group, a C1-C8 alkyl group optionally containing a hydroxy group, a C1-C8 alkoxy group optionally containing a carbonyl group, benzene, a C5-C6 cycloalkyl group, an arylalkyl group, or an alkylaryl group, provided that at least one of them is not a hydrogen.