| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to minimize generation of particles when an non-silicide photodiode region is selectively formed by performing a curing process on a photoresist layer before an etch-back process is performed on the photoresist layer. CONSTITUTION: A semiconductor substrate(100) is prepared in which a photodiode region and a logic region are defined. The respective first and second gate electrodes(102a,102b) corresponding to the photodiode region and the logic region are formed on the substrate. A silicide blocking layer(104) covering the first and second electrodes are formed. A photoresist layer pattern(151) that covers a portion corresponding to the photodiode region and exposes a portion corresponding to the logic region is formed on the resultant structure. The photoresist layer pattern is cured. The photoresist layer pattern is etched back to expose the upper surface of the silicide blocking layer. The silicide blocking layer is etched by using the photoresist layer pattern as a mask so that the upper surface of the first gate electrode in the photodiode region is exposed and the front surface of the second gate electrode in the logic region is exposed.
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