| 摘要 |
PURPOSE: A metal wire formation method of semiconductor devices is provided to improve a junction and a diffusion barrier properties by using a dense barrier metal. CONSTITUTION: An interlayer dielectric(12) having a contact hole is formed on a silicon substrate(11). A dense barrier metal, such as titanium(Ti) is deposited on the resultant structure including contact holes. N+ ions are implanted so as to form a meta-stable phase silicide film. An RTA(Rapid Thermal Annealing) is the performed, so that the metal-stable silicide film and the meta-stable TiN film are transferred to a stable silicide film(13a') and a stable TiN film(13b'). That is, a dense barrier metal(B) composed of the stable silicide film(13a') and the stable TiN film(13b') is formed.
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