SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LINE FOR PREVENTING VOID AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to be capable of preventing the generation of voids due to an interlayer dielectric formed between semiconductor lines by forming a curved spacer corresponding to the shape of the semiconductor line. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(101) and a plurality of semiconductor lines formed at the upper portion of the semiconductor substrate. At this time, a mask layer(109-1) is located at the uppermost portion of each semiconductor line. The semiconductor device further includes a spacer(113) formed at both sidewalls of each semiconductor line. Preferably, the width of the mask layer is smaller than that of the semiconductor line and each spacer is curved corresponding to the profile of the semiconductor line.