发明名称 METHOD FOR FABRICATING PHOTORESIST LAYER PATTERN OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for fabricating a photoresist layer pattern of a semiconductor device is provided to prevent the photoresist layer pattern from collapsing by freezing and eliminating distilled water used in a rinse step of a developing process performed on a photoresist layer. CONSTITUTION: The photoresist layer pattern(35) is formed by a developing process including a develop step, a rinse step and a dry step. After the rinse step is carried out, the distilled water(37) used in the rinse step is frozen. The frozen distilled water is eliminated and the dry step is performed. The resultant structure including the photoresist layer pattern is turned upside down. The resultant structure is vibrated to drop the distilled water of the frozen solid state from the resultant structure by gravity.
申请公布号 KR20030092864(A) 申请公布日期 2003.12.06
申请号 KR20020030702 申请日期 2002.05.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BOK, CHEOL GYU
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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