发明名称 |
VOLTAGE GLITCH DETECTION CIRCUIT AND INTEGRATED CIRCUIT DEVICE COMPRISING THE SAME AND APPARATUS AND METHOD FOR PROTECTING INTEGRATED CIRCUIT FROM VOLTAGE GLITCH ATTACK |
摘要 |
PURPOSE: A voltage glitch detection circuit and an integrated circuit device comprising the same, and an apparatus and a method for protecting the integrated circuit from voltage glitch attack are provided to detect voltage glitch exactly and to protect internal information from the voltage glitch safely. CONSTITUTION: The first voltage division unit and the second voltage division unit(120) include at least two resistors connected between an operation voltage and a ground to drive an integrated circuit chip. The first voltage comparison unit(140) comprises the first input stage receiving the first node voltage by being connected between two resistors of the first voltage division unit and the second input stage receiving the second node voltage by being connected between two resistors of the second voltage division unit, and thus generates the first comparison signal at an output stage by a voltage difference of these two input stages. The first buffering unit(160) outputs the first detection signal by buffering the first comparison signal. And one of the two nodes comprises a grounded capacitor having a high capacitance.
|
申请公布号 |
KR20030092777(A) |
申请公布日期 |
2003.12.06 |
申请号 |
KR20020030596 |
申请日期 |
2002.05.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUN, SANG JU;KIM, CHAN YONG;KIM, UI SEUNG |
分类号 |
G06K19/073;G11C5/14;G11C16/22;H03K17/22;(IPC1-7):H03K5/00 |
主分类号 |
G06K19/073 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|