| 摘要 |
PURPOSE: A semiconductor memory device having a self refresh operation and a method for operating the refresh are provided to prevent the loss of cell data when address skew is extended by disabling refresh blocking signal to address skew generated before 1/2 tRC in ATD(Address Transition Detector) operation period when a successive address skew is generated. CONSTITUTION: A semiconductor memory device having a self refresh operation includes an address shift detector(10), a request generator(12), a refresh correction unit(22), an oscillator(14), a refresh trigger register(16) and a main pulse generator(18). The address shift detector(10) generates ATD signal when the shift of external address is occurred and the request generator(12) creates a refresh request, a read/write request, refresh blocking signal by receiving the ATD signal from the address shift detector(10). The refresh correction unit(22) outputs the refresh trigger enable signal during the continuous address skew generation and the oscillator(14) generates the refresh trigger spinal with a predetermined period. The refresh trigger register(16) outputs the refresh trigger signal from the oscillator(14). And, the main pulse generator(18) generates a wordline enable signal by receiving the read/write request signal and refresh trigger signal.
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