METHOD FOR FABRICATING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact hole of a semiconductor device is provided to reduce the size of the contact hole by controlling the thickness of an organic anti-reflective coating of a conformal type. CONSTITUTION: An interlayer dielectric(33) is formed on an underlying structure(31). A photoresist layer pattern(35) for forming the contact hole(39) is formed on the interlayer dielectric. A spacer is formed on the sidewall of the photoresist layer pattern. The interlayer dielectric is etched to form the contact hole by using the photoresist layer pattern with the spacer as a mask.