| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing agent and a polishing method which are capable of effectively and quickly polishing an inorganic insulating film such as a silicon oxide film or the like and enabling process control to be easily carried out in a CMP technique for flattening an interlayer insulating film, a BPSG film, and a shallow trench isolation insulating film. <P>SOLUTION: The CMP polishing agent possessing thixotropic properties of decreasing its viscosity with an increase in shear stress is used for a semiconductor insulating film in the polishing method. A substrate provided with a film to be polished is pressed against the polishing cloth of a polishing platen, the substrate and the polishing platen are moved to polish the film as the CMP polishing agent used for the semiconductor insulating film is fed between the film and the polishing cloth. <P>COPYRIGHT: (C)2004,JPO</p> |
