SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device wherein, even if optical power varies, the differenceΔFFPx in the half width of light intensity does not greatly vary in a far-field pattern FFPx. SOLUTION: The semiconductor laser device 10 comprises a first electrode 6a; and a substrate 1 of first conductivity type, a first cladding layer 2 of the first conductivity type, an active layer 3, a second cladding layer 4 of second conductivity type, an insulator layer 5, and a second electrode 6b which are formed on the first electrode in this order. The second cladding layer 4 of the second conductivity type has a plurality of stages different in thickness. The insulator layer 5 covers the second cladding layer other than the relatively thick stages. The second electrode 6b is electrically connected with the second cladding layer at the relatively thick stages. The insulator layer is so formed that the product of the reciprocal number of the thickness thereof and the coefficient of thermal conductivity thereof is smaller than 4×108W/m2K. COPYRIGHT: (C)2004,JPO