| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method which forms a film in high uniformity in a film thickness and film quality ranging over a large area at a high speed and high quality and obtains high productivity, and a film formed by the same, and a thin film device using the film. <P>SOLUTION: Raw material system gas containing gas containing Si and/or C in a molecular formula and non-Si non-C system gas which is heated by a heat catalyst arranged in a gas introduction path and is composed of gas not containing Si and C in a molecular formula are isolated, respectively. A plurality of gas injection nozzles are provided in an antenna electrode so as to pass the hollow part of the antenna electrode having a hollow structure installed in a film forming space. Gas is injected from the gas injection nozzles to the film forming space and is mixed by being injected to the film forming space. The gas is decomposed and activated by plasma generated by the antenna electrode connected to a high-frequency power source, and a film is deposited on a substrate disposed opposing the antenna electrode in the film forming space. <P>COPYRIGHT: (C)2004,JPO</p> |
