| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique for both a lower capacity of a Schottky barrier diode and a larger current in forward direction. <P>SOLUTION: An epitaxial layer 2 having an n-type conductivity type is formed by a specific film thickness and specific impurity concentration on a semiconductor substrate 1 having an n-type conductivity, a surface protection film 5 is formed on the epitaxial layer 2, and an opening 6 reaching the epitaxial layer 2 is formed at the surface protection film 2. Then, an n-type diffusion region 7 is formed on the surface of the epitaxial layer 2 within the bottom surface of the opening 6, and then a surface electrode 10 made of a metal film in contact with the epitaxial layer 2 at the bottom of the opening 6 is formed. <P>COPYRIGHT: (C)2004,JPO</p> |
