| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that invasion of a free carrier from a channel region to a source region is easy and a DC signal current amplification rate is low since impurities are introduced into an epitaxial layer and they are diffused so as to form the source region in a conventional semiconductor device. SOLUTION: In the semiconductor device, the source region 4 is formed by introducing the impurities into a wide gap material of silicon carbide (SiC) and the like. Thus, a high potential barrier with respect to the free carrier exists in a boundary between the source region 4 and the channel region 8. Consequently, invasion of the free carrier from the channel region 8 into the source region 4 can almost be suppressed, and the DC signal current amplification rate can be improved much. COPYRIGHT: (C)2004,JPO
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