MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a structure which obtains quality quantum thin lines with ease and enhances the efficiency of semiconductor devices. SOLUTION: A first cladding layer is formed on a semiconductor substrate by epitaxial growth. A striped mask layer is formed on the substrate or the growth layer. Then, vapor phase etching is carried out to form a V-groove without producing an undercut under the mask layer. An active layer and a second cladding layer are grown in the V-groove in this order to obtain a semiconductor device. COPYRIGHT: (C)2004,JPO