High voltage inverting amplifier, especially for a plasma display panel, has a control transistor, of high voltage MOS type, that is connected between the voltage supply and the gate of the output transistor to control its voltage

摘要

Intermediate stage (ETI) for a high voltage inverting amplifier comprises: a control transistor (MB5), of high voltage MOS type on a thin oxide layer, connected between the supply terminal and the gate of the output transistor (M28); at least a first diode (DB) of which the cathode is connected to the control transistor gate and for which the anode is connected to the level transposition stage and; control means connected to the control transistor gate to authorize conduction once the supply voltage, initially zero, reaches a control transistor threshold value.