| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for detecting a terminal point of polishing wherein the film thickness of an object to be polished like a semiconductor wafer is measured accurately, and a terminal point of polishing is detected accurately so that high quality polishing can be achieved. <P>SOLUTION: The method for detecting a terminal point of polishing is used for polishing wherein a semiconductor wafer W is pressed against a polishing surface 10 while the wafer W is rotated, and the semiconductor wafer W is polished. A die 1 which occupies a prescribed area is arranged at the central part of the semiconductor wafer W. The film thickness or the change of the film thickness of the die 1 is measured so that a terminal point of polishing of a pattern 2 which is positioned around the die 1 is detected. <P>COPYRIGHT: (C)2004,JPO |
