SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, CIRCUIT BOARD AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To form a through-electrode with high quality.

SOLUTION: A recessed part 22 is formed in a semiconductor substrate 10 from a first face 20. The recessed part 22 is provided with an insulation layer 28 on the bottom face and inner wall face. The insulation layer 28 is provided with a conductive part 30 inside. A second face 38 of the semiconductor substrate 10 is etched with a first etchant having the property that the etching amount of the semiconductor substrate 10 is larger than that of the insulation layer 28 so that the conductive part 30 can be protruded in the condition of being coated with the insulation layer 28. Then, a part formed on the bottom face of at least the recessed part 22 in the insulation layer 28 is etched with a second etchant having the property that at least the insulation layer 28 is etched without forming any residue in the conductive part 30 so that the conductive part 30 can be exposed.

COPYRIGHT: (C)2004,JPO