METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having favorable electrical characteristics. SOLUTION: An ion-implanted layer 12 having an impurity ion peak is formed in an SiC substrate 11 by implanting an impurity ion into the substrate 11. Then the substrate 11 is stuck to another SiC substrate 13 and the stuck substrates 11 and 13 are disposed in an annealing furnace and heated in an argon atmosphere. Consequently, the semiconductor device having superior electrical characteristics can be manufactured by using the SiC substrate 11, because a largely damaged upper ion-implanted layer 12b containing the impurity ion at a low concentration of the ion-implanted layer 12 can be removed simultaneously when the annealing is performed. COPYRIGHT: (C)2004,JPO