| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacity element section functioning effectively without degradation in capacitor characteristics, and to provide a method for manufacturing a semiconductor device with manufacturing efficiency improved. SOLUTION: In this method for manufacturing a semiconductor device, the capacity element section forming process comprises a step of forming a lower electrode film on an insulating film and of securing regions for separating the lower electrode film in the plate line direction, a step of forming a ferroelectric thin film and an upper electrode film on the insulating film and the lower electrodes, and a step of separating the upper electrode film and the ferroelectric thin film into a plurality of belts in the direction squarely meeting the bit line. COPYRIGHT: (C)2004,JPO
|
