| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resistor in which a heating layer having a small resistance value and stress is stably formed at a high film deposition rate. <P>SOLUTION: This resistor comprises a heating layer 3 composed of polysilicon formed on a substrate 1 by a catalyst CVD method. A catalyst body used in the catalyst CVD method is comprised of a catalytic element selected from Ta, W and Mo, and the heating layer 3 contains the catalytic element of 0.5 ppm-10% by atom and a group V element of 1.0 ppm-0.3% by atom in the periodic table. <P>COPYRIGHT: (C)2004,JPO</p> |
