| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a III-V compound semiconductor having a large nitrogen composition can be manufactured easily, and to provide a semiconductor device manufactured by the method. SOLUTION: In the method of manufacturing the III-V compound semiconductor containing at least nitrogen atoms as group V atoms by the vapor growth method by using one or more kinds of gases containing nitrogen atoms as raw materials, the sum of flow ratios of the nitrogen atom-containing gases other than a nitrogen gas to the total flow rate of all gases supplied into a reaction chamber is made larger than the flow ratios of all other gases to the total flow rate. COPYRIGHT: (C)2004,JPO
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