| 摘要 |
PROBLEM TO BE SOLVED: To reduce layout area of a MRAM device in which tunnel magnetoresistive devices are arranged. SOLUTION: A tunnel magnetoresistive device TMR constituting a MTJ memory cell is connected between a bit line BL and a strap SL. In each memory cell column, the strap SL is shared by a plurality of tunnel magnetoresistive devices TMR in the same row block. An access transistor ATR connected between the strap SL and ground voltage GND, and turned off/on responding to a corresponding word line WL. Stored data is read from a selection memory cell based on comparison of a data read result performed respectively before and after the prescribed magnetic field is applied to the selection memory cell making memory cell groups coupled to the same strap as an object. COPYRIGHT: (C)2004,JPO
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