APPARATUS AND METHOD FOR PLASMA TREATMENT

摘要

PROBLEM TO BE SOLVED: To solve the problem that reaction products produced in an etching process stick since it is hard to apply RF power to a susceptor covering an electrode by a conventional technique and are deposited on the susceptor as the number of treated wafers increases to stick on a wafer and then cause a shape defect of a wire, etc., of a device and the problem that wet cycles which are periodically performed become shorter to spoil productivity. SOLUTION: The outer circumferential part of an electrostatic attraction electrode 16 other than a mount surface for the wafer 1 is covered with the susceptor 27 which has a metal film 26 of aluminum printed on its reverse surface and then an RF output applied during the etching process of the wafer 1 allows ions in plasma 13 to attack even the surface of the susceptor 7, thereby preventing the reaction products from being deposited. COPYRIGHT: (C)2004,JPO