| 摘要 |
The memory circuit equipped with a system for error correction comprises an address (ADD) bus (102), an input data (DIN) bus (108), an output data (Dout) bus (115), a memory store (100) with an address bus (113), an input data (DinSP) bus (114), and an output data (DoutSP) bus (110), and a circuit for error correction comprising an encoder (107). The memory circuit also comprises an address register (104) connected to the address bus (102) and storing the addresses corresponding only to the write operations in the memory, a data register (105) connected to the input data bus (108) for storing the data transmitted to the encoder (107), and a multiplexer (103) allowing to introduce a shift of a cycle in the write operation without modifying the read operation, in a manner to permit a longer computing time for the encoder. The memory store (100) is RAM with single port (SP) and comprises an internal address register (101) and an internal data register (106). The multiplexer (103) comprises two inputs, one connected to the address bus (102) and the other to the output of the address register (104), a single output connected to the address bus (102) and the other to the output of the address register (104), a single output connected to the address bus (113) of the memory store (100), and a control input for a Write Enable Negative (WEN) signal, that is for authorizing the write operation. The memory circuit also comprises a comparator (109) with two inputs, one connected to the address bus (102) and the other to the output of the address register (104), and a single output (112) connected to the control input of the second multiplexer (111) with two inputs, one connected to the output of the data register (105) and the other to the output data bus (110) of the memory store (100), and a single output connected to the output data bus (115). The memory circuit (claimed) is in three embodiments. In the second embodiment, the memory circuit comprises an additional memory store which is double-port, and an ECC decoder. In the third embodiment, the memory circuit comprises a synchronous static memory store which is single-port, and an ECC decoder. The memory circuit comprises a synchronous static memory. The memory circuit comprises a system for error correction of type Single Error Correction Double Error Detection (SEC-DED) or Double Error Correction, Triple Error Detection (DEC-TED). |
