| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which a III-V compound semiconductor having a large nitrogen atom composition can be manufactured easily, and to provide a semiconductor element manufactured by the method. <P>SOLUTION: In the method, the III-V compound semiconductor containing at least both arsenic atoms and nitrogen atoms as group V atoms is manufactured by the vapor phase growth method by using a gaseous starting material of nitrogen. In this method, the ratio of the partial pressure of a gaseous starting material of arsenic to the sum of partial pressures of group III gaseous starting materials in a reaction chamber is controlled to ≤1. <P>COPYRIGHT: (C)2004,JPO |
