| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance emission luminance and emission lifetime of an AlGaInN light emitting diode. <P>SOLUTION: A AlN buffer layer 2 of 500 Å, a high carrier concentration n<SP>+</SP>layer 3 of silicon doped GaN having a film thickness of about 2.2 μm and an electron concentration of 2×10<SP>18</SP>/cm<SP>3</SP>, a low carrier concentration n layer 4 of nondoped GaN having a film thickness of about 1.5 μm and an electron concentration of 1×10<SP>16</SP>/cm<SP>3</SP>, lightly doped i layer 61 of Mg doped GaN having a film thickness of about 0.5 μm and Mg concentration of 5×10<SP>19</SP>/cm<SP>3</SP>, and a heavily doped i<SP>+</SP>layer 62 having a film thickness of about 0.2 μm and Mg concentration of 2×10<SP>20</SP>/cm<SP>3</SP>are formed on a sapphire substrate 1. A low carrier concentration p layer 501 having a hole concentration of 1×10<SP>16</SP>/cm<SP>3</SP>and rendered to have p conductivity type through irradiation with an electron beam, and a high carrier concentration p<SP>+</SP>layer 502 having a hole concentration of 2×10<SP>17</SP>/cm<SP>3</SP>are formed in specified regions of the i layer 61 and the i<SP>+</SP>layer 62. The n layer and the p layer are composed, respectively, of a multiple layer having a carrier concentration increasing stepwise in the direction receding from the pn junction wherein the carrier concentration is substantially equalized between the low carrier concentration n layer 4 and the low carrier concentration p layer 501. Consequently, emission luminance and emission lifetime are enhanced. <P>COPYRIGHT: (C)2004,JPO |
