| 摘要 |
<P>PROBLEM TO BE SOLVED: To convert a nitride semiconductor doped with p-type impurities into a low resistance p-type nitride semiconductor layer. <P>SOLUTION: After a gallium nitride based compound semiconductor layer doped with p-type impurities is grown in a reaction container by vapor phase epitaxial growth, annealing is performed in an atmosphere substantially containing no hydrogen while keeping a specified temperature level in the reaction container thus converting the gallium nitride based compound semiconductor doped with p-type impurities into a p-type gallium nitride based compound semiconductor layer. <P>COPYRIGHT: (C)2004,JPO |
