发明名称 HIGH-FREQUENCY POWER AMPLIFIER TRANSISTOR CHIP, HIGH- FREQUENCY POWER AMPLIFIER MODULE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To protect a high-frequency power amplifier circuit for mobile communications, etc., from damages, based on its load impedance variation, make a system designer free from the design of a protective circuit applicable thereto and realize applications to various systems, with a low cost and compact constitution. SOLUTION: A protection circuit has a circuit for detecting the collector voltage at the collector of a high-frequency power amplifier transistor during high frequency operation, and a circuit for dividing a current, depending on the collector voltage at the base of the transistor. The protective circuit is formed into one chip with the high-frequency power amplifier transistor. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003347857(A) 申请公布日期 2003.12.05
申请号 JP20020152824 申请日期 2002.05.27
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES LTD 发明人 ONO FUMINOBU
分类号 H03F1/52;(IPC1-7):H03F1/52 主分类号 H03F1/52
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