| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device where usable maximum light output can be enhanced by increasing the kink level while suppressing the primary mode oscillation due to the increase of a current, and to provide a method for manufacturing the same. SOLUTION: In a semiconductor laser 100 comprising a first semiconductor layer 20 consisting of an AlGaAs lower clad layer 1 and an AlGaAs lower optical confinement layer 2, an InGaAs active layer 30, a second semiconductor layer 40 consisting of an AlGaAs upper light confinement layer 3 and an AlGaAs upper clad layer 4 sequentially laminated on a GaAs substrate 10, and a ridge part 4A formed on the upper face of the AlGaAs upper clad layer 4, the ratio (h1/h2) of a thickness h1 of the ridge part 4A to a thickness h2 of the second semiconductor layer 40 is set so as to be less than 0.5. COPYRIGHT: (C)2004,JPO
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