DEPOSITED SPACER STRUCTURE AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a spacer structure for a stacked layer composed of an electrically conductive layer and a cap layer formed on a semiconductor substrate, wherein the structure has improved electrical isolation and low coupling capacitance.

SOLUTION: A spacer structure is deposited on the sidewall of a stacked layer composed of an electrically conductive layer and a cap layer thereon. A dielectric layer composed of a material having a lower dielectric constant than that of silicon nitride is formed covering the semiconductor substrate. Then, a first silicon nitride layer is formed covering the substrate. The first silicon nitride layer and the dielectric layer are sequentially etched so as to form an inner spacer on the sidewall of the stacked layer. A second silicon nitride layer is formed covering the substrate to form an outer spacer on the sidewall of the inner spacer. By forming a deposited spacer structure in which a low-dielectric-constant material is buried, the coupling capacitance generated therein is greatly reduced.

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