| 摘要 |
PROBLEM TO BE SOLVED: To enhance the frequency characteristics of a semiconductor laser unit where a semiconductor laser element is bonded to a heat sink. SOLUTION: An n-Ga<SB>1-z1</SB>Al<SB>z1</SB>As clad layer 32, an n or i-In<SB>x1</SB>Ga<SB>1-x1</SB>As<SB>1-y1</SB>P<SB>y1</SB>optical waveguide layer 33, an i-In<SB>x3</SB>Ga<SB>1-x3</SB>As<SB>1-y3</SB>P<SB>y3</SB>quantum well active layer 34, a p or i-In<SB>x1</SB>Ga<SB>1-x1</SB>As<SB>1-y1</SB>P<SB>y1</SB>optical waveguide layer 35, a p-Ga<SB>1-z1</SB>Al<SB>z1</SB>As clad layer 36, and a p-GaAs contact layer 37 are formed sequentially on an n-GaAs substrate 31. A ridge structure is formed on one half of the element and the n-Ga<SB>1-z1</SB>Al<SB>z1</SB>As clad layer 32 is exposed up to the way thereof on the other half of the element before an insulating film 38 is formed. Subsequently, a p-side electrode 39 and an n-side electrode 40 are formed thus fabricating the semiconductor laser element. Eleven semiconductor laser elements are bonded in parallel to an AlN heat sink substrate 151' provided with a level difference of about 3μm, a groove 158 and a pair of electrodes 155 through a solder material 156 thus fabricating a semiconductor laser unit. COPYRIGHT: (C)2004,JPO
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