| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SIMOX substrate for sufficiently performing gettering in each heat treatment of ion implantation, high- temperature annealing, and device formation. SOLUTION: Oxygen deposit (a) having size and density for achieving the gettering of metal impurities is formed inside a silicon single crystal substrate 10 before oxygen ion implantation, thus achieving the sufficient gettering of the metal impurities in the oxygen ion implantation. Furthermore, a number of punch out transpositions P due to the oxygen deposit (a) are generated in the high-temperature annealing after the ion implantation, thus sufficiently achieving the gettering of the metal impurities in the high-temperature annealing and device with the punch out transpositions P as a gettering site. COPYRIGHT: (C)2004,JPO
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