| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element which can alleviate lattice distortion between a semiconductor layer not matched in lattice with a semiconductor substrate and the same semiconductor substrate. <P>SOLUTION: A low price GaAs system long-wavelength laser, a light emitting diode or a solar battery can be obtained, which can realize stable growth of a quantum well layer 5 on a lattice distortion alleviating layer 3 even when difference between the lattice constant of the semiconductor substrate 1 and that of the quantum well layer 5 is large, by providing, between the semiconductor substrate 1 and quantum well layer 5, the lattice distortion alleviating layer 3 consisting of a multiple layer of the AlInP layer and GaInP layer which is formed to provide the lattice constant of each layer near to the lattice constant of the semiconductor substrate 1 in the side of semiconductor substrate 1, near to the lattice constant of the quantum well layer 5 in the side of the quantum well layer 5, and to also provide the lattice constant of each layer to change gradually between the lattice constant of the semiconductor substrate 1 and the lattice constant of the quantum well layer 5. <P>COPYRIGHT: (C)2004,JPO |
