| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of checking a mask used in a lithography process of forming the circuit pattern of a semiconductor device, which is superior in throughput and capable of improving the reliability of the mask because even extremely small defects are checked. <P>SOLUTION: Coordinates of a specific region on a mask are extracted, and only the specific region is subjected to a defect check process carried out by a checking device by the use of charged particles such as SEM or the like. A part 6-7 which requires a defect check and is selected out of parts (e.g. a gate transistor region of a logic part), having a large effect on performance characteristics of a semiconductor device and furthermore being provided with circuit patterns that are fine and apt to be affected by micro defects, is considered as the specific region of the mask. <P>COPYRIGHT: (C)2004,JPO</p> |
