| 发明名称 |
Semiconductor component with high resistance to effects of electrostatic discharge, includes vertical transient attenuator connected to source or drain of MOSFET |
| 摘要 |
The semiconductor substrate (43, 44) carries first and second cup-shaped zones (41, 42). The first (41) includes a lateral MOSFET (21) with source and drain electrode (53, 52). The second includes a vertical transient attenuator (56) including a surface electrode (48). A metallic connection (54) is made between the source or drain of the MOSFET and the surface electrode of the transient attenuator. |
| 申请公布号 |
DE10322593(A1) |
申请公布日期 |
2003.12.04 |
| 申请号 |
DE2003122593 |
申请日期 |
2003.05.20 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
YOSHIDA, KAZUHIKO;ICHIMURA, TAKESHI;FUJIHIRA, TATSUHIKO;KUMAGAI, NAOKI |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8222;H01L21/8234;H01L21/8248;H01L21/8249;H01L27/02;H01L27/06;H01L29/78 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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