| 摘要 |
A semiconductor device can be formed with fewer voids in the solder bonding a laminate of a silicon chip, an insulator substrate, and a metal base, with a solder layer positioned between the layers. After placing the laminate in a furnace, it is evacuated and then pressurized with hydrogen gas, and then heated to melt the solder. While maintaining the heat, the furnace is again evacuated to remove voids in the solder, and then the furnace is positively pressurized again with hydrogen gas to prevent holes produced by the voids traveling in the solder, and to obtain a uniform solder fillet shape. Thereafter the laminate is rapidly cooled to obtain a finer grain solder to increase the rate of creep to quickly remove the warping of the laminate to the original state.
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