METHOD OF FORMING SEMICONDUCTOR DEVICE WITH ACCESS GATE

摘要

The present invention provides for a method of forming a semiconductor device with an access gate including forming a stacked gate structure (12) with an isolation cap (22) thereon on a substrate (16) and with sidewalls of the stack being isolated, characterized by the steps of forming a conductive layer (42) over the gate structure (12) and the substrate (16) at a region (44) adjacent the gate structure (12) and comprising the location for the access gate, controlling and employing the thickness of the conductive layer (42) to determine the width of the access gate.