REACTIVE SPUTTERING METHOD AND DEVICE

摘要

A method for forming a film on a substrate (3) placed in a vacuum chamber (1) by reactive sputtering by using a reactive sputtering device comprising a sputter evaporation source (2) provided in the vacuum chamber (1) and having a metal target, a sputter power supply (4) for driving the sputter evaporation source (2), and an introduction mechanism (5) for introducing an inert gas for sputtering and a reactive gas forming a compound with the sputtered metal into the vacuum chamber (1), wherein constant voltage control to keep the voltage of the sputter power supply (4) at a target voltage Vs is carried out, and the target voltage control to control the target voltage Vs is carried out at a control speed lower than that of the constant voltage control so that the spectrum of plasma emission produced in front of the sputter evaporation source (2) may be a target one.